Enhanced valley splitting in Si layers with oscillatory Ge concentration
نویسندگان
چکیده
The valley degeneracy in Si qubit devices presents problems for their use quantum information processing. It is possible to lift this by using the Wiggle Well architecture, which an oscillatory Ge concentration couples valleys. This paper basic theory of phenomenon together with model calculations empirical pseudopotential obtain overall magnitude effect and its dependence on wavelength oscillations. We derive important selection rule can limit effectiveness certain circumstances.
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2022
ISSN: ['1098-0121', '1550-235X', '1538-4489']
DOI: https://doi.org/10.1103/physrevb.106.085304